▎ 摘　　要

We report the transport behavior of bilayer graphene grown by thermal chemical vapor deposition. The bilayer graphene films annealed at 700 degrees C in a furnace under Ar atmosphere exhibited transitions from a metal to a semiconductor or insulator, with temperature-dependent resistances. This modulation of electrical properties could be explained by two possible mechanisms: variable range hopping (VRH) and thermally activated (TA) conduction. In particular, Anderson localization was suggested for the metal-insulator (MI) transition in the transport of bilayer graphene, shifting the transition point to room temperature by an increase in the disorder up to 7.5x10(13) cm(-2).