▎ 摘　　要

Carrier transport properties of fluorinated graphene with various fluorination rates are presented. Onset of transition from insulating to metallic conduction is observed in dilute fluorinated graphene. Highly fluorinated graphene shows electron-hole asymmetry in transport properties and local resistivity maximum at the hole conduction region, which are presumably caused by the existence of resonant fluorine impurities. Drastic change of the asymmetric feature occurs after removing fluorine atoms and creating structural defects by thermal annealing. These results suggest that the type of impurities or defects in graphene is detectable by examining asymmetry in transport properties. (C) 2013 AIP Publishing LLC.