• 文献标题:   Comprehensive study of graphene grown by chemical vapor deposition
  • 文献类型:   Article
  • 作  者:   FAN JC, LI TF, GAO YH, WANG JG, DING HL, HENG H
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS
  • ISSN:   0957-4522 EI 1573-482X
  • 通讯作者地址:   Anhui Univ Technol
  • 被引频次:   5
  • DOI:   10.1007/s10854-014-2170-1
  • 出版年:   2014

▎ 摘  要

Graphene was grown on Cu foil by chemical vapor deposition with CH4 as carbon source, and then was transferred onto various substrates for device applications. The structural and optical properties of graphene were investigated, comprehensively. Raman spectra indicate as-grown and transferred graphene films are homogenous monolayer graphene. Optical microscopy and scanning electron microscopy images reveal wrinkle-free and smooth surface of transferred graphene, confirming the high quality of graphene. In addition, the transferred graphene on glass exhibits excellent transmittances in the visible region (89.3 % at similar to 500 nm). Therefore, the results present the controllable approaches to achieve as-grown and transferred high quality graphene for the fabrication of multiple nanoelectronic devices.