• 文献标题:   Dynamic Admittance and Equivalent Circuit Model of Graphene Nanoribbon Interconnects at THz Frequencies
  • 文献类型:   Article
  • 作  者:   CHEN ZD, ZHANG JY, YU ZP
  • 作者关键词:   graphene nanoribbon, interconnect, dynamic admittance, transmission line model, edge scattering
  • 出版物名称:   JOURNAL OF COMPUTATIONAL THEORETICAL NANOSCIENCE
  • ISSN:   1546-1955 EI 1546-1963
  • 通讯作者地址:   Tsinghua Univ
  • 被引频次:   2
  • DOI:   10.1166/jctn.2010.1616
  • 出版年:   2010

▎ 摘  要

Dynamic admittance of metallic graphene nanoribbons (GNRs) as potential interconnects is investigated within the framework of non-equilibrium Green's function (NEGF). The effect of elastic edge scattering is considered. A transmission line (TL) model with kinetic inductance, quantum capacitance, as well as quantum contact resistance and scattering resistance is proposed for modeling the GNR interconnects. Results from this TL model and simulations show good consistency for GNRs with different lengths. Short GNRs exhibit alternatively inductive and capacitive behaviors as a function of frequencies. Due to the damping from the scattering resistance, long GNRs act like RC lines where the effect of kinetic inductance is negligible. In wide GNRs where more than one subbands contribute to the ac transport, large discrepancy is found between the TL model and full-band simulations.