▎ 摘　　要

Herein, the possibilities of tuning oscillation frequency and power in terahertz (THz) graphene nanoribbon (GNR)-based avalanche transit time (ATT) sources by introducing a third terminal on their planar structure are discussed. In this regard, a three-terminal planner impact ATT (IMPATT) structure based on GNR on oxide (SiO2) is proposed. Inherent power combining capabilities of parallel-connected IMPATT structures are utilized to increase the power output at THz frequencies. Static, high frequency, and noise simulations are carried out using in-house simulation codes based on self-consistent quantum drift-diffusion model. Results show that around 0.7-5.3% and 9.0-13.3% modulation of frequency and power output are achievable, respectively, in the GNR IMPATT oscillators operating in the frequency range of 1.0-10.0 THz, respectively, by applying a suitable amount of voltage at the third or controlling terminal; however, the enhancement of noise level at the output is observed to be insignificant as a result of using the active third-terminal control.