▎ 摘　　要

We present in-situ Raman measurements of laser-induced oxidation in exfoliated single-layer graphene. By using high-power laser irradiation, we can selectively and in a controlled way initiate the oxidation process and investigate its evolution over time. Our results show that the laser-induced oxidation process is divided into two separate stages, namely tensile strain due to heating and subsequent p-type doping due to oxygen binding. We discuss the temporal evolution of the D/G-mode ratio during oxidation and explain the unexpected steady decrease of the defect-induced D mode at long irradiation times. Our results provide a deeper understanding of the oxidation process in single-layer graphene and demonstrate the possibility of sub-mu m patterning of graphene by an optical method. [GRAPHICS] (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim