▎ 摘　　要

In order to fabricate a complementary inverter, precise control of the threshold voltages for n-type semiconductor based thin film transistors (TFTs) is highly required. Here we provided a facile methodology for controlling the threshold voltage of ZnO-based TFTs. Chemically-derived graphene oxide (GO) and Au-decorated GO(Au-GO) flakes were hybridized with solution-processed ZnO thin films to control electron injection determined by the workfunction difference between ZnO and GO or Au-GO. As a result, the threshold voltages for the ZnO, GO/ZnO, and Au-GO/ZnO TFTs were 24 +/- 3V,-11 +/- 4 V, and 63 +/- 5 V, respectively, which determine depletion or enhancement mode TFTs without any significant change in the field effect mobility and on/off ratio.