▎ 摘　　要

The diamagnetic susceptibility of disordered monolayer graphene containing scatterers with long-range potential is calculated in a self-consistent Born approximation. Explicit numerical results are obtained for a Gaussian potential. The results show that the delta-function susceptibility in the ideal graphene is broadened by disorder and that the broadening is determined by the condition that states can be mixed with those at the Dirac point. For charged impurities, the susceptibility exhibits a double-peak structure as a function of the Fermi energy at zero temperature, due to the rapid decrease in effective scattering strength with the increase of the Fermi level.