▎ 摘　　要

Owing to its atomic thickness, thermal dissipation is one significant bottleneck for the practical application of graphene in electronics. Here, it is demonstrated that a high-quality ultraclean van der Waals interface can be obtained after modifying the SiO2/Si substrate with hexagonal-boron nitride (h-BN) by plasma-enhanced chemical vapor deposition, which improves the mobility and the interfacial thermal dissipation of graphene field-effect transistors (FETs). Onh-BN, interfacial thermal resistance decreases by more than 77% and the saturated power density of graphene FETs increases by 2-3-folds to 3.45 x 10(5)W cm(-2), higher than the power density of current CPUs (approximate to 100 W cm(-2)), demonstrating its potential in future graphene-based electronics.