▎ 摘　　要

All-inorganic perovskite CsPbI3 quantum dots (QDs) offer much better stability for photovoltaic applications. Unfortunately, their cell efficiencies are hindered by the low carrier transport efficiency of QD-assembled films. In addition, agglomeration-induced phase change of QDs poses another problem for material and device degradation. Herein, the use of mu-graphene (mu GR) to crosslink QDs to form mu GR/CsPbI3 film is demonstrated. It is found that the resultant QDs film provides not only an effective channel for carrier transport, as witnessed by much improved conductivity but also significantly better stability against moisture, humidity, and high temperature stresses. The mu GR/CsPbI3 based solar cell shows increased device performance. More specifically, compared to the solar cell without the mu GR treatment, V-OC is improved to 1.18 from 1.16 V, J(SC) to 13.59 from 13.17 mA cm(-2), and FF to 72.6 from 68.1%, and overall power conversion efficiency to as high as 11.40 from 10.41%, a 12% increase. In addition, the instability originating from the thermal/moisture-induced QD agglomeration is also greatly suppressed by the mu GR crosslinking. The optimized device retains >98% of its initial efficiency after being stored in N-2 atmosphere for one month. Importantly, under 60% humidity and 100 degrees C thermal stresses, the mu GR/CsPbI3 devices show much better stability.