▎ 摘　　要

We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GFETs display saturation regions that can be tuned by modifying the top gate voltage, and have on/off ratios of at least 2 x 10(3) at room temperature and at small drain and gate voltages. In addition, the nanoperforated GFETs display orders of magnitude higher photoresponses than any room-temperature graphene detector configurations that do not involve heterostructures with bandgap materials.