▎ 摘　　要

Electrical properties of low-threshold field emission cathodes produced by growth nanocluster graphene films on the pointed surface of heavily doped n +SiC by sublimation epitaxy have been considered. The quality of the graphene coating has been assessed based on the morphological studies and Raman spectroscopy. Using the volt-ampere characteristics the work function from a pointed cathode with graphene coating was calculated (similar to 0.76 eV). Such a low value of the work function is explained on the assumptions that the graphene film has the nanocluster nature and the sources of the field emission are graphene nanoclusters.