• 文献标题:   Memory Behaviors Based on ITO/Graphene Oxide/Al Structure
  • 文献类型:   Article
  • 作  者:   YI MD, GUO JL, HU B, XIA XH, FAN QL, XIE LH, HUANG W
  • 作者关键词:  
  • 出版物名称:   CHINESE PHYSICS LETTERS
  • ISSN:   0256-307X EI 1741-3540
  • 通讯作者地址:   Nanjing Univ Posts Telecommun
  • 被引频次:   3
  • DOI:   10.1088/0256-307X/32/7/077201
  • 出版年:   2015

▎ 摘  要

We investigate the memory properties of the ITO/graphene oxide/Al diodes. It is found that the devices show different memory behaviors with the diverse geometry and thickness of Al. When the thickness of the Al electrode is relatively thick, the device of the cross-point Al electrode shows a three-level memory effect, and the counterpart device of the cross-bar Al electrode exhibits a volatile static random access memory effect. When the thickness of the Al electrode is thinner, the above devices demonstrate a flash memory effect. The different memory behaviors of ITO/GO/Al diodes are ascribed to the mode and degree of reduction and oxidation of GO.