• 文献标题:   Charge-Transport Tuning of Solution-Processable Graphene Nanoribbons by Substitutional Nitrogen Doping
  • 文献类型:   Article
  • 作  者:   KIM KT, LEE JW, JO WH
  • 作者关键词:   graphene nanoribbon, nitrogendoping, ntype semiconducting property, solution processability, thinfilm transistor
  • 出版物名称:   MACROMOLECULAR CHEMISTRY PHYSICS
  • ISSN:   1022-1352 EI 1521-3935
  • 通讯作者地址:   Seoul Natl Univ
  • 被引频次:   28
  • DOI:   10.1002/macp.201300529
  • 出版年:   2013

▎ 摘  要

Novel nitrogen-doped graphene nanoribbons (GNR-Ns) are synthesized by the coupling reaction between a pyrazine (or benzene) derivative and naphthalene followed by cyclodehydrogenation. The amount of nitrogen doping in the GNR-Ns is controlled by changing the monomer feed ratio of pyrazine to benzene for polymerization. The electron mobility of the GNR-Ns increases while the hole mobility decreases, as the amount of nitrogen doping in the GNR increases, indicating that the charge-transport behavior of GNRs is changed from ambipolar to an n-type semiconductor. The threshold voltage of the GNR-Ns also shifts from 20 to -6 V as the amount of nitrogen doping increases.