▎ 摘　　要

Quantized magnetotransport is observed in 5.6 x 5.6 mm(2) epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 degrees C). The precise quantized Hall resistance of R-xy = h/2e(2) is maintained up to record level of critical current I-xx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain. Adsorption-induced molecular doping in a second device reduced the carrier concentration close to the Dirac point (n approximate to 10(10) cm(-2)), where mobility of 18760 cm(2)/V is measured over an area of 10 mm(2). Atomic force, confocal optical, and Raman microscopies are used to characterize the large-scale devices, and reveal improved SiC terrace topography and the structure of the graphene layer. Our results show that the structural uniformity of epitaxial graphene produced by face -to -graphite processing contributes to millimeter -scale transport homogeneity, and will prove useful for scientific and commercial applications. (C) 2016 Elsevier Ltd. All rights reserved.