▎ 摘　　要

In this paper, graphene/ZnO composite film is fabricated by fairly rapid and easy approach. Zinc oxide (ZnO) (<50nm particle size) has been immediately deposited on uncured pre-deposited randomly oriented graphene flakes (less than four layers) thin film, using electrohydrodynamic atomization technique (EHDA). After curing, graphene/ZnO composite film morphology and structure have been characterized. For electrical behavior analysis, graphene/ZnO composite thin film is employed as cathode in a diode device indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS)/poly(dioctylfluorene-benzothiadiazole) (F8BT)/(graphene/ZnO). Obtained J-V curve shows diode behavior i.e., at voltage of 0.3 V, the current density in organic structure is at low value of 1.4 x 10(-5)A/cm(2) and by further increasing the applied voltage to 2V, the device current density is increased by 50 times and has reached up to 6.3 x 10(-4)A/cm(2). (C) 2014 The Japan Society of Applied Physics