• 文献标题:   Fabrication of artificial graphene in a GaAs quantum heterostructure
  • 文献类型:   Article
  • 作  者:   SCARABELLI D, WANG S, PINCZUK A, WIND SJ, KUZNETSOVA YY, PFEIFFER LN, WEST K, GARDNER GC, MANFRA MJ, PELLEGRINI V
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF VACUUM SCIENCE TECHNOLOGY B
  • ISSN:   2166-2746
  • 通讯作者地址:   Columbia Univ
  • 被引频次:   8
  • DOI:   10.1116/1.4932672
  • 出版年:   2015

▎ 摘  要

The unusual electronic properties of graphene, which are a direct consequence of its two-dimensional honeycomb lattice, have attracted a great deal of attention in recent years. Creation of artificial lattices that re-create graphene's honeycomb topology, known as artificial graphene, can facilitate the investigation of graphenelike phenomena, such as the existence of massless Dirac fermions, in a tunable system. In this work, the authors present the fabrication of artificial graphene in an ultrahigh quality GaAs/AlGaAs quantum well, with lattice period as small as 50nm, the smallest reported so far for this type of system. Electron-beam lithography is used to define an etch mask with honeycomb geometry on the surface of the sample, and different methodologies are compared and discussed. An optimized anisotropic reactive ion etching process is developed to transfer the pattern into the AlGaAs layer and create the artificial graphene. The achievement of such high-resolution artificial graphene should allow the observation for the first time of massless Dirac fermions in an engineered semiconductor. (C) 2015 American Vacuum Society.