• 文献标题:   Modification of graphene as active hydrogen storage medium by strain engineering
  • 文献类型:   Article
  • 作  者:   SURYA VJ, IYAKUTTI K, MIZUSEKI H, KAWAZOE Y
  • 作者关键词:   graphene, strain engineering, charge localization, adsorption, borane, hydrogen storage
  • 出版物名称:   COMPUTATIONAL MATERIALS SCIENCE
  • ISSN:   0927-0256 EI 1879-0801
  • 通讯作者地址:   Noorul Islam Univ
  • 被引频次:   14
  • DOI:   10.1016/j.commatsci.2012.07.016
  • 出版年:   2012

▎ 摘  要

From the first principles study, it is shown that chemically inert monolayer graphene becomes active by strain engineering. The sheets are stretched biaxially to introduce strain of 1.43%, 5%, 8.5% and 10% in the C-C bond lengths. The introduction of strain enhances the chemical reactivity of graphene surface and hence they become chemically more active than the pristine one. The interaction of borane and molecular hydrogen increases with increase in strain in the substrate (strained graphene) and these molecules bind with considerable binding energy. Since graphene sheets can be freely suspended without any substrate, we can stretch the sheets by tuning distance between the clamped edges of the holding frame. In this way, stacks of stretched graphene sheets can be manufactured and a good hydrogen storage medium can be obtained. Likewise, one can tailor graphene in such a way to exhibit its multi-faceted applicability by strain engineering. (c) 2012 Elsevier B.V. All rights reserved.