• 文献标题:   Effect of changing electronic states of molecules on frequency domain of graphene FETs
  • 文献类型:   Article
  • 作  者:   OKETA T, IKUTA T, MASAI H, TAMAKI T, TERAO J, MAEHASHI K
  • 作者关键词:   graphene, fieldeffect transistor, power spectrum density, noise, molecular state
  • 出版物名称:   APPLIED PHYSICS EXPRESS
  • ISSN:   1882-0778 EI 1882-0786
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.35848/1882-0786/ac564d
  • 出版年:   2022

▎ 摘  要

The high surface sensitivity of low-dimensional carbon nanomaterials renders them good candidates for noise detection. Herein, Mg-porphyrin-modified graphene field-effect transistors (FETs) were fabricated, and parts-per-billion concentrations of NO2 were introduced to the devices. When the power spectrum density (PSD) of the Mg-porphyrin-modified graphene was measured in NO2, a specific PSD change near 1000 Hz was observed. This change could be due to the change in the electrical state of Mg-porphyrin caused by NO2 adsorption. This study reveals that frequency-domain measurement of graphene FETs can be used to evaluate changes in the electronic state of molecules.