▎ 摘　　要

We demonstrate the fabrication of a monolayer graphene/-Ga2O3 heterostructure and its interesting prospect of producing a suitable Schottky barrier potential for deep-ultraviolet (DUV) responsive photovoltaic device. The transient response behavior shows a faster response time for photovoltaic mode operation of the photodiode. The fast response at a zero bias is due to generation of photocurrent under an internal built-in field in the graphene/Ga2O3 interface without any contribution from the trapped carriers. The fabricated device also shows an excellent photoresponsivity of 6.1AW(-1) with a slower response time at a low reverse bias voltage (-1.5V). The high photoresponsivity at a bias voltage can be related to carrier multiplication due to carriers trapping/release process. Our findings show that the graphene/-Ga2O3 heterostructure can be significant for self-powered/low power consuming DUV detector applications.