▎ 摘　　要

In this paper, we report the design, fabrication, and demonstration of a compact, V-band, zero-bias, and linear-in-dB power detector based on our in-house metal-insulator-graphene diode fabricated on a glass substrate. The presented circuit is optimized for the frequency band of 40-75 GHz. The measured prototype shows a repeatable measured dynamic range of at least 50 dB with down to -50 dBm sensitivity on 500-mu m-thick quartz substrate. It also shows input return loss better than -9.5 dB over the entire design bandwidth. The measured tangential responsivity for the fabricated circuit on glass is 168 V/W at 2.5 GHz and 15 V/W at 60 GHz. The obtained results together with the robust device fabrication based on chemical vapor deposition graphene promote the proposed scheme and device for repeatable, statistically stable millimeter-wave, and submillimeter-wave applications.