▎ 摘　　要

By performing an atomistic transport calculation, we examine the temperature dependence of the tunneling current in a graphene nanoribbon band-to-band tunneling transistor. The subthreshold swing is shown to be a nonlinear function of temperature, and in stark contrast to a conventional FET, the swing versus temperature shows a negative slope below a certain drain current. The nonlinear threshold voltage shift with temperature is also examined. A method to capture the distinguishing nonlinearity in the voltage shift with temperature and drain current is proposed.