• 文献标题:   The Influence of Cu Lattices on the Structure and Electrical Properties of Graphene Domains during Low-Pressure Chemical Vapor Deposition
  • 文献类型:   Article
  • 作  者:   KIM DW, KIM SJ, KIM JS, SHIN M, KIM GT, JUNG HT
  • 作者关键词:   cu domain, chemical vapor deposition, epitaxy, graphene, single crystal
  • 出版物名称:   CHEMPHYSCHEM
  • ISSN:   1439-4235 EI 1439-7641
  • 通讯作者地址:   Korea Adv Inst Sci Technol
  • 被引频次:   5
  • DOI:   10.1002/cphc.201402633
  • 出版年:   2015

▎ 摘  要

The influence of various Cu lattices on the texturing of graphene domains during low-pressure chemical vapor deposition was investigated in a large area. The results show that the sizes and shapes of graphene domains grown on Cu(111) substrates match well with those of the underlying Cu(111) domains, which seem to be quasi-single-crystalline. In contrast, on other Cu substrates such as (100) and more intermediate domains, graphene islands with poly-domains (ca. 85%) are significantly nucleated, eventually merging into polycrystalline graphene. Within the overall channel-length range, graphene from a Cu foil shows a higher resistance compared to graphene from a Cu(111) domain, with the extracted average channel resistances being 34.51 m(-1) for Cu(111) and 66.17 m(-1) for the Cu foil.