• 文献标题:   Is silicene the next graphene?
  • 文献类型:   Article
  • 作  者:   VOON LCLY, GUZMANVERRI GG
  • 作者关键词:   si, electronic material, nanostructure, electronic structure, atomic layer deposition
  • 出版物名称:   MRS BULLETIN
  • ISSN:   0883-7694 EI 1938-1425
  • 通讯作者地址:   The Citadel
  • 被引频次:   42
  • DOI:   10.1557/mrs.2014.60
  • 出版年:   2014

▎ 摘  要

This article reviews silicene, a relatively new allotrope of silicon, which can also be viewed as the silicon version of graphene. Graphene is a two-dimensional material with unique electronic properties qualitatively different from those of standard semiconductors such as silicon. While many other two-dimensional materials are now being studied, our focus here is solely on silicene. We first discuss its synthesis and the challenges presented. Next, a survey of some of its physical properties is provided. Silicene shares many of the fascinating properties of graphene, such as the so-called Dirac electronic dispersion. The slightly different structure, however, leads to a few major differences compared to graphene, such as the ability to open a bandgap in the presence of an electric field or on a substrate, a key property for digital electronics applications. We conclude with a brief survey of some of the potential applications of silicene.