▎ 摘　　要

Graphene mask was tried to use in GaN low-angle incidence microchannel epitaxy by chemical beam epitaxy. Three types of masks were prepared to study; one time and two times transferred graphene masks, which correspond to one and two-times transferred graphenes, and SiO2 mask as a reference. The amount of the lateral growth was found to increase by the use of graphene mask. This is because TMG was quickly decomposed also on the graphene mask by the penetration of the catalytic effect of the underneath GaN template. Growth islands were formed on the one time transferred graphene mask. The aligned triangular shape of the islands suggests that the crystal information of the GaN template was transmitted through the graphene mask. Namely, the growth seemed to proceed in the mode of remote epitaxy. V/III ratio dependence also indicated that the nucleation behavior of the growth islands was mainly controlled by the remote epitaxy not by the pin holes accidentally opened in the mask. On the other hands, the multi-photon photoluminescence measurement indicated that the high-quality lateral growth without dislocations was successfully grown over the graphene mask.