▎ 摘　　要

In this work, a locally graphitized amorphous carbon (LGAC) film was successfully prepared through catalytic graphitization process. Taking advantage of its locally conductive characteristic, we demonstrate an effective and repeatable method to improve the reliability of graphene oxide based RRAM devices. The above method is responsible for a fluctuation decrease of high/low resistance states (HRS/LRS) and SET/RESET voltage from 139.6%/76.9% to 31.4%/7.5% and 50.5%/47.7% to 7.7%/6.9%, respectively. The migration of oxygen ions during both the SET and RESET processes were well restrained within the narrow conductive areas thanks to the LGAC insertion layer. In addition, the optimized memory devices also showed pretty good cycling endurance and high temperature retention characteristics. This approach may be promising for developing reliable graphene oxide based RRAM devices.