• 文献标题:   Modification of Electronic Properties of Graphene with Self-Assembled Monolayers
  • 文献类型:   Article
  • 作  者:   LEE B, CHEN Y, DUERR F, MASTROGIOVANNI D, GARFUNKEL E, ANDREI EY, PODZOROV V
  • 作者关键词:   graphene, selfassembled monolayer, graphene edge functionalization, doping of graphene, transport in graphene
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984
  • 通讯作者地址:   Rutgers State Univ
  • 被引频次:   82
  • DOI:   10.1021/nl100587e
  • 出版年:   2010

▎ 摘  要

Integration of organic and inorganic electronic materials is one of the emerging approaches to achieve novel material functionalities Here, we demonstrate a stable self-assembled monolayer of an alkylsilane grown at the surface of graphite and graphene Detailed characterization of the system using scanning probe microscopy. X-ray photoelectron spectroscopy, and transport measurements reveals the monolayer structure and its effect on the electronic properties of graphene The monolayer induces a strong surface doping with a high density of mobile holes (n > 10(13) cm(-2)) The ability to tune electronic properties of graphene via stable molecular self-assembly, including selective doping of steps, edges, and other defects, may have important implications in future graphene electronics