• 文献标题:   Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride
  • 文献类型:   Article
  • 作  者:   ENGELS S, TERRES B, KLEIN F, REICHARDT S, GOLDSCHE M, KUHLEN S, WATANABE K, TANIGUCHI T, STAMPFER C
  • 作者关键词:   bilayer, graphene, heterostructure, hexagonal boron nitride, raman spectroscopy
  • 出版物名称:   PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS
  • ISSN:   0370-1972 EI 1521-3951
  • 通讯作者地址:   Rhein Westfal TH Aachen
  • 被引频次:   11
  • DOI:   10.1002/pssb.201451384
  • 出版年:   2014

▎ 摘  要

We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing step. While extracted material properties such as charge carrier mobility, overall doping, and strain are not influenced by the annealing, an initial annealing step lowers doping and strain variations and thus results in a more homogeneous sample. Additionally, the narrow 2D-sub-peak widths of the Raman spectrum of BLG, allow us to extract information about strain and doping values from the correlation of the 2D-peak and the G-peak positions. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim