• 文献标题:   High-frequency gate manipulation of a bilayer graphene quantum dot
  • 文献类型:   Article
  • 作  者:   DROSCHER S, GUTTINGER J, MATHIS T, BATLOGG B, IHN T, ENSSLIN K
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   ETH
  • 被引频次:   11
  • DOI:   10.1063/1.4737937
  • 出版年:   2012

▎ 摘  要

We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop (TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover, we demonstrate gate manipulation with square shaped voltage pulses at frequencies up to 100 MHz and show that the signal amplitude is not affected by the presence of the capacitively coupled back gate. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737937]