▎ 摘　　要

Heterostructured materials composed of In2O3 nanocrystals and graphene layers were successfully developed by facile synthesis technique. Such a binary heterostructure with suitable configuration and inimitable morphology exhibits rich and varied properties particularly in nanodevices such as gas sensors. FESEM investigation revealed that In2O3 nanocrystals were well monodispersed and disseminated on the complete surface of the graphene layers. XRD analysis also confirmed the presence of carbon peak in the spectrum due to the existence of graphene layers. Elemental mapping also reassured the homogenous and uniform distribution of In2O3 nanocrystals on the graphene surface. Room temperature photoluminescence was carried out to investigate the optical properties of In2O3/Graphene heterostructure. Hydrogen sensors made of In2O3/Graphene showed improved sensitivity which is attributed to benign surface interaction of In2O3 with graphene which enhanced overall electrical conductivity of heterostructure. This study offers strategies for the design and development of heterostructures with diverse variation of semiconductors configurations through simple technique for improved nanodevices. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.