• 文献标题:   Gate driven adiabatic quantum pumping in graphene
  • 文献类型:   Article
  • 作  者:   PRADA E, SANJOSE P, SCHOMERUS H
  • 作者关键词:   thin urn, metal, nanofabrication, electronic transport
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098
  • 通讯作者地址:   CSIC
  • 被引频次:   15
  • DOI:   10.1016/j.ssc.2010.12.042
  • 出版年:   2011

▎ 摘  要

We propose a new type of quantum pump made out of graphene, adiabatically driven by oscillating voltages applied to two back gates. From a practical point of view, graphene-based quantum pumps present advantages as compared to normal pumps, like enhanced robustness against thermal effects and a wider adiabatic range in driving frequency. From a fundamental point of view, apart from conventional pumping through propagating modes, graphene pumps can tap into evanescent modes, which penetrate deeply into the device as a consequence of chirality. At the Dirac point the evanescent modes dominate pumping and give rise to a universal response under weak driving for short and wide pumps, even though the charge per unit cycle is not quantized. (C) 2011 Elsevier Ltd. All rights reserved.