▎ 摘　　要

Graphene has attracted large interest in photonic applications owing to its promising optical properties, especially its ability to absorb light over a broad wavelength range, which has lead to several studies on pure monolayer graphene-based photodetectors. However, the maximum responsivity of these photodetectors is below 10 mAW(-1), which significantly limits their potential for applications. Here we report high photoresponsivity (with high photoconductive gain) of 8.61 AW(-1) in pure monolayer graphene photodetectors, about three orders of magnitude higher than those reported in the literature, by introducing electron trapping centres and by creating a bandgap in graphene through band structure engineering. In addition, broadband photoresponse with high photoresponsivity from the visible to the mid- infrared is experimentally demonstrated. To the best of our knowledge, this work demonstrates the broadest photoresponse with high photoresponsivity from pure monolayer graphene photodetectors, proving the potential of graphene as a promising material for efficient optoelectronic devices.