• 文献标题:   Asymmetric Growth of Bilayer Graphene on Copper Enclosures Using Low-Pressure Chemical Vapor Deposition
  • 文献类型:   Article
  • 作  者:   FANG WJ, HSU AL, SONG Y, BIRDWELL AG, AMANI M, DUBEY M, DRESSELHAUS MS, PALACIOS T, KONG J
  • 作者关键词:   bilayer graphene, cu enclosure, growth mechanism, carbon diffusion
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   MIT
  • 被引频次:   64
  • DOI:   10.1021/nn5015177
  • 出版年:   2014

▎ 摘  要

In this work, we investigated the growth mechanisms of bilayer graphene on the outside surface of Cu enclosures at low pressures. We observed that the asymmetric growth environment of a Cu enclosure can yield a much higher (up to 100%) bilayer coverage on the outside surface as compared to the bilayer growth on a flat Cu foil, where both sides are exposed to the same growth environment. By simultaneously examining the graphene films grown on both the outside and inside surfaces of the Cu enclosure, we find that carbon can diffuse from the inside surface to the outside via exposed copper regions on the inside surface. The kinetics of this process are examined by coupling the asymmetric growth between the two surfaces through a carbon diffusion model. Finally, using these results, we show that the coverage of bilayer graphene can be tuned simply by changing the thickness of the Cu foil, further confirming our model of carbon delivery through the Cu foil.