• 文献标题:   Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene
  • 文献类型:   Article
  • 作  者:   HAN W, WANG WH, PI K, MCCREARY KM, BAO W, LI Y, MIAO F, LAU CN, KAWAKAMI RK
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Univ Calif Riverside
  • 被引频次:   97
  • DOI:   10.1103/PhysRevLett.102.137205
  • 出版年:   2009

▎ 摘  要

Spin-dependent properties of single-layer graphene (SLG) have been studied by nonlocal spin valve measurements at room temperature. Gate voltage dependence shows that the nonlocal magnetoresistance (MR) is proportional to the conductivity of the SLG, which is the predicted behavior for transparent ferromagnetic-nonmagnetic contacts. While the electron and hole bands in SLG are symmetric, gate voltage and bias dependence of the nonlocal MR reveal an electron-hole asymmetry in which the nonlocal MR is roughly independent of bias for electrons, but varies significantly with bias for holes.