• 文献标题:   Quasi-2D Crystalline gamma-Alumina Grown by Graphene-Assisted Atomic Layer Deposition
  • 文献类型:   Article
  • 作  者:   KHEIRANDISH E, SCHOFIELD M, GAJDARDZISKAJOSIFOVSKA M, KOUKLIN N
  • 作者关键词:   2d, alumina, atomic layer deposition, graphene, nano, transport
  • 出版物名称:   ADVANCED MATERIALS INTERFACES
  • ISSN:   2196-7350
  • 通讯作者地址:   Univ Wisconsin
  • 被引频次:   0
  • DOI:   10.1002/admi.202000561 EA JUN 2020
  • 出版年:   2020

▎ 摘  要

This study presents a facile high-yield bottom-up fabrication and morphology-structure investigations of a free-standing network of multi-layer quasi-2D flakes consisting of intrinsically nonlayered gamma-Al2O3. The synthesis comprises a multi-cycle atomic layer deposition (ALD) of amorphous alumina that uses an interconnected graphene network as a growth scaffold followed by approximate to 800 degrees C air anneal. The structures are studied by X-ray diffraction, selected area electron diffraction, and high-resolution transmission electron microscopy, while electric properties are assessed with the help of two-terminal dc-transport measurements. The individual flakes comprise nanocrystalline phase cubic spinel gamma-Al2O3 with a close-packed cubic texture in the & x3008;111 & x3009;(cubic) ALD-induced growth direction. The charge transport is confirmed to be Ohmic with the room temperature electrical conductivity approaching approximate to 10(-8) S m(-1). This work opens a door to a low-cost highly scalable synthesis of a variety of quasi-2D metal oxides for widespread uses ranging from support material, sensing to environmental remediation.