• 文献标题:   Dual-Gated Graphene Devices for Near-Field Nano-imaging
  • 文献类型:   Article
  • 作  者:   SUNKU SS, HALBERTAL D, ENGELKE R, YOO H, FINNEY NR, CURRELI N, NI GX, TAN C, MCLEOD AS, LO CFB, DEAN CR, HONE JC, KIM P, BASOV DN
  • 作者关键词:   nanoinfrared imaging, nanophotocurrent, top gate, bilayer graphene
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:  
  • 被引频次:   11
  • DOI:   10.1021/acs.nanolett.0c04494 EA FEB 2021
  • 出版年:   2021

▎ 摘  要

Graphene-based heterostructures display a variety of phenomena that are strongly tunable by electrostatic local gates. Monolayer graphene (MLG) exhibits tunable surface plasmon polaritons, as revealed by scanning nano-infrared experiments. In bilayer graphene (BLG), an electronic gap is induced by a perpendicular displacement field. Gapped BLG is predicted to display unusual effects such as plasmon amplification and domain wall plasmons with significantly larger lifetime than MLG. Furthermore, a variety of correlated electronic phases highly sensitive to displacement fields have been observed in twisted graphene structures. However, applying perpendicular displacement fields in nano-infrared experiments has only recently become possible [Li, H.; et al. Nano Lett. 2020, 20, 3106-3112]. In this work, we fully characterize two approaches to realizing nano-optics compatible top gates: bilayer MoS2 and MLG. We perform nano-infrared imaging on both types of structures and evaluate their strengths and weaknesses. Our work paves the way for comprehensive near-field experiments of correlated phenomena and plasmonic effects in graphene-based heterostructures.