▎ 摘　　要

The far-infrared emission properties of epitaxial graphene on SiC obtained by current injection were investigated using an infrared camera and Fourier-transform infrared spectroscopy. The radiation directivity from the graphene emitter was observed in the directions perpendicular to the surface and edge of the sample. The emission energy density from the graphene edge was larger than that from the graphene surface in all directions. The maximum measured temperature change at 0.4 W for the edge emission was 76.1 K for a tilt angle of 50 degrees and that for the surface emission was 54.1 K for 0 degrees. A blackbody-like emission spectrum with a constant peak wavelength of 10.0 mu m, regardless of the applied electrical power, was observed for both the surface and edge. A far-infrared light emitter was successfully realized using single-crystal graphene on SiC.