• 文献标题:   Negative Differential Resistance of Graphene Oxide/Sulphur Compound
  • 文献类型:   Article
  • 作  者:   FIGAROVA SR, ALIYEV EM, ABASZADE RG, ALEKBEROV RI, FIGAROV VR
  • 作者关键词:   graphene oxide, sulphur, hummers method, negative differential resistance, hopping tunneling
  • 出版物名称:   JOURNAL OF NANO RESEARCH
  • ISSN:   1662-5250 EI 1661-9897
  • 通讯作者地址:  
  • 被引频次:   4
  • DOI:   10.4028/www.scientific.net/JNanoR.67.25
  • 出版年:   2021

▎ 摘  要

Graphene oxide/sulphur compound was synthesized by Hammers method. The chemical composition, presence/quantity of functional groups, exfoliation level, number of layers, crystallite size of graphene oxide/sulphur were characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy images. The current-voltage characteristics of the samples were measured in air at room temperature. In the I - V characteristic curve of graphene oxide/sulphur compound with the ratio of oxygen to carbon of 3.54 and that to sulphur of 42.54, negative differential resistance was observed. The negative differential resistance is attributed to current carrier transitions between the localized states formed by functional groups.