▎ 摘　　要

Top-down subtractive lithography has previously been used to pattern graphene nanostructures which lack ideal properties due to (1) limited resolution and (2) disordered edges. Here, we introduce a method to convert such disordered edges into relatively smooth zigzag edges via annealing on a Cu(111) substrate at similar to 950 degrees C. The Cu catalyzes the re-arrangement of graphene edge atoms to energetically favorable sites, inducing zigzag edge faceting. The dimensions of the graphene nanostructures can be increased, decreased, or held constant during the annealing by tuning the relative balance between growth and etching reactions, described by a fundamental growth rate equation. To demonstrate the flexibility of this method, we lithographically pattern graphene nanoribbons with zigzag or armchair orientations, or alternatively perforate graphene with circular holes, and then anneal these nanostructures to realize zigzag edge termination in each case, with nanostructure feature size tailored from 8 to 80 nm. The annealed nanostructures have smoother zigzag edges (similar to 40% reduction in 1 sigma line edge roughness), and Raman spectroscopy confirms that they have lower edge disorder than top-down patterned samples. (C) 2015 Elsevier Ltd. All rights reserved.