▎ 摘　　要

The experimental results of the direct deposition of graphene films on a gallium nitride (GaN)/sapphire substrate by catalyst-free atmospheric pressure (AP) CVD are presented. The quality and thickness of the synthesized samples can be controlled by the growth conditions. The prepared graphene/GaN samples show excellent optical transparency especially in the visible and infrared wavebands. The electrical transport properties are studied in the temperature range 4-300 K. The results indicate an advance step towards graphene-based applications in microelectronics and optoeletronics.