• 文献标题:   Fluorination of Graphene by Reactive Ion Etching System Using Ar/ F-2 Plasma
  • 文献类型:   Article
  • 作  者:   MATSUTANI A, TAHARA K, IWASAKI T, HATANO M
  • 作者关键词:  
  • 出版物名称:   JAPANESE JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-4922 EI 1347-4065
  • 通讯作者地址:   Tokyo Inst Technol
  • 被引频次:   2
  • DOI:   10.7567/JJAP.52.06GD11
  • 出版年:   2013

▎ 摘  要

We demonstrated a novel fluorination process of graphene using Ar/F-2 plasma. We carried out characterization of the plasma-processed graphene with Raman spectroscopy. In addition, it was found that the proposed "face-down'' technique using Ar/F-2 plasma was a low-damage fluorination process. We believe that the proposed technique using Ar/F-2 plasma is very useful for the fluorination of graphene films by optimizing the process conditions for electronic and optical device applications. (c) 2013 The Japan Society of Applied Physics