• 文献标题:   Gate-tunable graphene-organic interface barrier for vertical transistor and logic inverter
  • 文献类型:   Article
  • 作  者:   PARUI S, RIBEIRO M, ATXABAL A, BAIRAGI K, ZUCCATTI E, SAFEER CK, LLOPIS R, CASANOVA F, HUESO LE
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   CIC NanoGUNE
  • 被引频次:   1
  • DOI:   10.1063/1.5045497
  • 出版年:   2018

▎ 摘  要

One of the key requirements for efficient organic-electronic devices is the creation of a negligible energy barrier for carrier injection at the metal-organic interface. Here, a graphene-organic interface with an almost negligible energy barrier is demonstrated in a high-performance hybrid heterojunction device. The gate-tunable current-voltage characteristics show that the electronic transport can be tuned from an interface-limited to a bulk-dominated regime by lowering the graphene-organic interface energy barrier. N-type transistors with a PTCDI-C8 organic thin film as an active layer provide an ON-OFF current ratio of similar to 10(7), while similar p-type transistors with a CuPc molecular layer reach an ON-OFF current ratio of similar to 10(5). Furthermore, logic inverters with standby current as low as similar to 1 pA are demonstrated using a combination of both n- and p-type transistors. Published by AIP Publishing.