▎ 摘　　要

In order to fully utilize the excellent electrical properties of graphene as an electrode, it is essential to preserve the nature of pristine graphene. However, structural defects or polymer residues during the conventional fabrication steps are inevitable, severely limiting device performance. To overcome these issues, we used a seamless lateral graphene-graphene oxide (GO)-graphene layer fabricated by oxidation scanning probe lithography as electrodes of the MoS2 field-effect transistor. We demonstrated residue-free and flawless graphene surfaces and furthermore GO interlayer between the MoS2 and gate dielectric reduces interface roughness and screens interface traps, leading to improved electron injection and carrier mobility.