• 文献标题:   Observation of Nanosecond Hot Carrier Decay in Graphene
  • 文献类型:   Article
  • 作  者:   FAN L, LEE SK, CHEN PY, LI W
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICAL CHEMISTRY LETTERS
  • ISSN:   1948-7185
  • 通讯作者地址:   Wayne State Univ
  • 被引频次:   1
  • DOI:   10.1021/acs.jpclett.8b00234
  • 出版年:   2018

▎ 摘  要

An extremely long decay time of hot carriers in graphene at room temperature was observed for the first time by monitoring the photoinduced thermionic emission using a highly sensitive time-of-flight angle-resolved photo-emission spectroscopy method. The emission persisted beyond 1 ns, two orders of magnitude longer than previously reported carrier decay. The long lifetime was attributed to the excitation of image potential states at very low laser fluencies.