▎ 摘　　要

The transport properties of graphene T-type structure (GTS), both armchair-edged and zigzag-edged, are studied systematically within Landauer formalism in terms of tight binding Green's function method. For armchair-edged GTS (AGTS), a phase diagram of conductance in parameter space of Fermi energy and the stub width is presented. When a gate voltage is applied in the stub, a perfect linear dependence of the gap position shift of conductance on the gate voltage is found. The origin of the conductance gap as well as such linear behavior is explained. For the zigzag-edged GTS (ZGTS), it is found that the dependence of the transport properties on the stub height can be classified into two groups that tightly depend on whether the stub width equals 3n-1 or not.