▎ 摘　　要

We present a comparative study of magetoresistance (MR) behaviors in few-layer graphene (FLG) and multilayer graphene (MLG) with various thicknesses. A maximum MR as large as 9500% is observed in a similar to 23 nm sample @ 2.5 K, with a non-saturating linear characteristic up to 7 T. MR decreases with increasing temperature and is proportional to the average mobility in similar to 23 nm and similar to 12 nm thick samples. In a thinner sample with thickness of similar to 1.6 nm, the maximum MR value is only 68% @ 7 T @ 280 K, which is two orders of magnitude smaller than those in the thicker samples. We attribute the MR mechanism of the FLG to mobility fluctuations Delta mu. Both the above situations follow the classical Parish and Littlewood model. Through comparison we unveil that both changes in the band structure resulting from a different sample thickness and the disorder induced by sample preparation and graphene/substrate interface are responsible for the MR behavior in the thickness variation. Our results indicate that MR tuning can be realized by precise thickness control in multilayer graphene. (C) 2017 Elsevier Ltd. All rights reserved.