▎ 摘　　要

The control in electrical properties of graphene is essentially required in order to realize graphenebased nanoelectronics. In this study, N-doped graphene was successfully obtained via nitrogen plasma treatment. Graphene was synthesized on copper foil using thermal chemical vapor deposition. After N-2 plasma treatment, the G-band of the graphene was blueshifted and the intensity ratio of 2D-to G-bands decreased with increasing the plasma power. Pyrrolic-N bonding configuration induced by N-2 plasma treatment was studied by X-ray photoelectron spectroscopy. Remarkably, electrical characterization including Hall measurement and I-V characteristics of the N-doped graphene exhibit semiconducting behavior as well as the n-type doping effect.