• 文献标题:   DFT studies of Si- and Al-doping effects on the acetone sensing properties of BC3 graphene
  • 文献类型:   Article
  • 作  者:   MORADI M, NOEI M, PEYGHAN AA
  • 作者关键词:   sensor, doping, graphene, dft, theoretical study
  • 出版物名称:   MOLECULAR PHYSICS
  • ISSN:   0026-8976 EI 1362-3028
  • 通讯作者地址:   Islamic Azad Univ
  • 被引频次:   29
  • DOI:   10.1080/00268976.2013.783720
  • 出版年:   2013

▎ 摘  要

In order to find a novel sensor, reactivity and sensitivity of the intrinsic, Al- and Si-doped BC3 graphene-like sheets to an acetone molecule were investigated by using B3LYP and B97X-D density functional calculations. Adsorption of acetone on the intrinsic, Al- and Si-doped BC3 sheets releases energies of about 7.2, 36.5 and 24.8 kcal/mol, respectively, using B97X-D. The Si-doped sheet presents high sensitivity to acetone compared with the intrinsic and Al-doped sheets indicated by the calculated geometrical structures and electronic properties for these systems. The HOMO/LUMO energy gap of Si-doped BC3 sheet is significantly decreased from 2.20 to 1.65eV (B3LYP), which would result in electrical conductance increment. Thus, Si-doped sheet are expected to be a potential candidate for detecting the presence of acetone.