▎ 摘　　要

In this work, the growth of thin Zn films on 4H-SiC(0001)-graphene and the effects of system annealing at various temperatures are presented. Metal growth on graphene is interesting to understand the grown morphology and metal intercalation, to use it to tune graphene properties. The properties such as chemical composition and surface structure were studied for deposited films and after annealing from 640 K to 1080 K. Using X-ray Photoelectron Spectroscopy and Low Energy Electron Diffraction techniques it was found that zinc interacts weakly with the substrate and does not change the XPS spectra bond energies but it intercalates, as seen from the extinction of the 6 x 6 diffraction spots. Moreover, in order to obtain complementary results, Density Functional Theory calculations were performed. The theoretical results for adsorption energy of Zn at various types of SiC surfaces can explain the preferred adsorption sites and the decrease of adsorption energy with Zn coverage presented in the experimental results.