• 文献标题:   High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors
  • 文献类型:   Article
  • 作  者:   DE FAZIO D, GOYKHMAN I, YOON D, BRUNA M, EIDEN A, MILANA S, SASSI U, BARBONE M, DUMCENCO D, MARINOV K, KIS A, FERRARI AC
  • 作者关键词:   photodetector, graphene, mos2, heterostructure, flexible optoelectronic
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Univ Cambridge
  • 被引频次:   84
  • DOI:   10.1021/acsnano.6b05109
  • 出版年:   2016

▎ 摘  要

We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimeter-scale chemical vapor deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible polyethylene terephthalate substrate. The operation mechanism relies on injection of photoexcited electrons from MoS2 to the SLG channel. The external responsivity is 45.5A/W and the internal 570A/W at 642 nm. This is at least 2 orders of magnitude higher than bulk-semiconductor flexible membranes. The photoconductive gain is up to 4 x 10(5). The photocurrent is in the 0.1-100 mu A range. The devices are semitransparent, with 8% absorptance at 642 nm, and are stable upon bending to a curvature of 1.4 cm. These capabilities and the low-voltage operation (<1 V) make them attractive for wearable applications.